What is the tan film in the chip wafer?

TAN is a common film material in chip manufacturing. It is similar to Tin properties and functions.

Detailed explanation of wafer tin film

Today we will systematically introduce the knowledge of the TAN film's nature, preparation methods, and other aspects.

What is tan?

TAN is an important transitional metal nitride.Transition metal nitride also includes: TIN, CRN, HFN, ZRN, etc.

Physical nature

High melting point: TAN melting point is higher than 3000 ° C, which can apply to high temperature environments.

High hardness: TAN is a very hard material. The hardness can reach more than 30 GPA. It is about half of diamond hardness and 20 times that of metal copper hardness.

High density: about 16.4 g/cm³.

High thermal conductivity

Chemistry

TAN has a strong chemical inertia, is not easy to be corroded in corrosive gas and liquid, and has better antioxidant properties at high temperatures.

The structure of the tan film?

According to the different contents of TA and N, the TAN film has multiple different forms. The common ones are TAN, TA2N, TA3N5, TA4N, TA5N6, etc.Followed by their crystal stacking methods, their structure can be the cube structure (BCC), the six -way structure (HEX), and the facial cubic structure (FCC).

The electrical performance of TAN film?

The electrical properties of the TAN film will be significantly different according to the different nitrogen content.The smaller the nitrogen content, the stronger the conductivity.

When tanx, x & lt; 1: usually have lower resistors close to metals.

When tanx, x ：1: TANX film is semiconductor or insulator.

When TANX, x & GT; 1: TANX forms an amorphous phase, resulting in a significant increase in the resistivity of the film.

How to prepare the tan film?

Generally there are the following methods to make: magnetic control reaction sputtering, electron beam evaporation, low-voltage metal organic chemical gas deposition (LP-MOCVD), etc.

This article takes the reaction magnetic sputter as an example. By regulating the ratio of the sorch (AR) to the N2, the size of the X in the TANX is controlled.As an inert working gas, the gas can produce plasma, which can knock out the atoms of the TA target.As a reactive gas, nitrogen (N2) is combined with the sputtering TA atom to form a TAN film.

When the proportion of nitrogen is low, only part of the TA atoms splashing down can react with nitrogen atoms to form nitride, resulting in a relatively high content in the thin film, and the conductivity is better.

When the proportion of nitrogen is high, the TA atoms splashing down have more opportunities to react with nitrogen atoms, and the nitrogen content exceeds 钽.Such a film will have a high resistivity, manifested as insulation or semiconductor properties.

Tan's application in semiconductor?

In the back -end interconnection process (BEOL) manufactured by integrated circuits (IC), the TA/TAN film is used as a copper interconnection, which is mainly used to prevent the spread of copper atoms from spreading to the silicon base or the media layer.middle.The diffusion of copper atoms will greatly affect the performance of the chip.

In the precision film resistor, TAN uses very common, and has greater moisture resistance than nickel chromium alloy.

etc.

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